Research Article
Open Access
Preparation and characterization of indium doped SnS thin films for solar cell applications
P. Thiruramanathan1, G.S. Hikku2, R. Krishna Sharma*1, M. Siva Shakthi3
1Department of Physics, Mepco Schlenk Engineering College, Sivakasi-626005, India
2Centre for Nano Science and Technology, Mepco Schlenk Engineering College, Sivakasi-626005, India
3Centre for Research and Post Graduate Department of Physics, Ayya Nadar Janaki Ammal college, Sivakasi - 626 124, India.
R. Krishna Sharma et al /Int.J. TechnoChem Res. 2015,1(1),pp 59-65.
Abstract
SnS compounds are potential candidates for the production of low cost solar conversion
materials. They have recently attracted considerable attention because of their physical properties,
which are suitable for optoelectronic device fabrication. Indium doped SnS thin films were
fabricatedusing the spray pyrolysis technique and their structural,morphological and elemental
analyses were analyzed by X-ray diffraction (XRD),scanning electron microscope (SEM) and energy
dispersive analysis for X-ray (EDAX) respectively. The crystallite size of the pure SnS and indium
doped SnS was calculated using the Debye Scherrer’s formula. XRD result reveals that the crystallite
size of thin films was reduced with increasein the dopant concentration. The EDAX results confirm the
presence of indiumin the thin films and its atomic percentage increases as the doping concentration
was increased.
Keywords
thin films, spray pyrolysis technique, doping, morphology, atomic percentage.
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