Review Article
Open Access
Influence of Dipping Cycle on Physical Properties of Nanocrystalline CdO Thin Films Prepared by SILAR Method
M. Karunakaran1*, K. Rubanancy1, M. Rajini1, G. Kavitha1and R. Chandramohan2
1Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, India.
2Department of Physics, Sree Sevugan Annamalai College, Devakottai - 630 303, India.
M. Karunakaran et al /Int.J. TechnoChem Res. 2016,2(1),pp 84-89.
Abstract
Cadmium oxide (CdO) thin films were prepared by successive ionic layer adsorption and
reaction (SILAR) method by altering dipping cycle. The prepared films were annealed at 2500C for 2
h. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and
scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were
polycrystalline with cubic structure. Both crystallinity and the grain size were found to increase with
increasing dipping. SEM analysis shows the porous nature of the surface with spherical nano clusters.
Energy dispersive spectroscopic analysis (EDX) confirmed the presence of Cd and O elements. The
films exhibited maximum transmittance (50% - 75%) in infra-red (IR) region. The estimated band gap
energy (Eg) was in the range of 2.0 eV - 2.2 eV.