International Journal of
TechnoChem Research

ISSN 2395 - 4248

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NEWS & UPDATION

  • 2017, Volume 3 No 3 of International Journal of TechnoChem Research is released.
  • 2017, Volume 3 No 3 of International Journal of TechnoChem Research is released.

    2017, Volume 3, No 3, of International Journal of TechnoChem Research is released

  • Included in CAS Database, USA [by Chemical Abstracts Service, USA]
  •  International  Journal of TechnoChem Research

    has been selected for inclusion in CAS,USA  by  Chemical Abstracts Service, USA.

  • International Journal of TechnoChem Research
  • International Journal of TechnoChem Research has been selected for inclusion in CAS,USA by Chemical Abstracts Service, USA.

    International Journal of TechnoChem Research has been selected for inclusion in CAS,USA by Chemical Abstracts Service, USA.

ABSTRACT

Interband optical transition energies in InAs/InP semiconductor nanostructure

S.Saravanan and A.John Peter

ABSTRACT

Abstract : Group III-V narrow band gap semiconducting materials are considered to be promising candidates for infrared photo-detectors in the long wavelength regions. Especially P based InAs semiconductor is considered to be a promising material for fibre optical communication due to the emission of mid-infrared wavelengths 1. The heavy hole exciton binding energy in a InAs0.8P0.2/InP quantum well wire is studied taking into consideration of strain contributions between the inner and outer material in the presence of magnetic field strength. The energy difference of the ground and the first excited state is computed taking into account the effects of quantum confinement. The effects of geometrical confinement and the magnetic field on the optical band gap are investigated in the InAs0.8P0.2/InP quantum well wire. Magnetic field induced optical gain with the incident photon energy is computed in the presence of magnetic field strength and the geometrical confinement. The larger optical gain depends on the optical transition in the optical matrix element and the transition life time 2. This approach can be used to obtain long wavelength emission of 1.55 ?m for optical fiber telecommunication applications. The optical, electrical and transport properties are found to enhance with the effects of external perturbations and the spatial confinement effects with respect to bulk values due to their reduction of dimensionality of nano-heterostructures3. The studies of optical transitions between two energy levels are recognized to be important for the understanding of electronic properties in order to model any suitable optical devices. The higher optical transition energies are observed in any low dimensional semiconductor system. The wide applications of this system are solar cells, photo-detectors, semiconductor light-emitting diodes, laser diodes and optical modulators. Keywords..Quantum confinement, optical transition energy, optical gain, exciton binding energy, external perturbations.

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