International Journal of
TechnoChem Research

ISSN 2395 - 4248

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  • Co-Published with Asian Publication Corporation
  •  Co-Published with Asian    Publication Corporation  

     Co-Published with Asian    Publication Corporation  

     Co-Published with Asian    Publication Corporation  

     Co-Published with Asian    Publication Corporation  

ABSTRACT

Influence of Dipping Cycle on Physical Properties of Nanocrystalline CdO Thin Films Prepared by SILAR Method

M. Karunakaran, K. Rubanancy, M. Rajini, G. Kavitha and R. Chandramohan

ABSTRACT

Cadmium oxide (CdO) thin films were prepared by successive ionic layer adsorption and reaction (SILAR) method by altering dipping cycle. The prepared films were annealed at 2500C for 2 h. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline with cubic structure. Both crystallinity and the grain size were found to increase with increasing dipping. SEM analysis shows the porous nature of the surface with spherical nano clusters. Energy dispersive spectroscopic analysis (EDX) confirmed the presence of Cd and O elements. The films exhibited maximum transmittance (50% - 75%) in infra-red (IR) region. The estimated band gap energy (Eg) was in the range of 2.0 eV - 2.2 eV. Keywords: Thin films, Silar, X-ray diffraction, Crystallite size, Glass Substrate and Optical band gap.

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